STD1NB80-T4 ,N-CHANNEL 800VSTD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STD1NC60 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1NC60-1 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1NC60-T4 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD1NC70Z-1 ,N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD1NC70ZSTP2NC70Z STP2NC70ZFPSTD1NC70Z-1V Drain ..
STD1NK60 ,N-CHANNEL 600VAPPLICATIONS
STD1NB80T4-STD1NB80-T4
N-CHANNEL 800V
STD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK
PowerMESH MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN
TAPE&REEL
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
May 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 1Α, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD1NB802/6
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STD1NB803/6
STD1NB804/6
STD1NB805/6
. consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://
STD1NB806/6
