STD1NB80-1 ,NSTD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) ..
STD1NB80T4 ,N-CHANNEL 800VSTD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STD1NB80-T4 ,N-CHANNEL 800VSTD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STD1NC60 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1NC60-1 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1NC60-T4 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW30N65M5 ,N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247Absolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAKTO-220FPTO-247, I²PAKV Gate-source v ..
STW30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STW30NM60D ,N-CHANNEL 600VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW30NM60N , N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STW32N65M5 ,N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW34NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STD1NB80-1
N
STD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAK
PowerMESH MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
September 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 1Α, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD1NB80-12/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STD1NB80-13/5
STD1NB80-14/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://
STD1NB80-15/5
:
www.ic-phoenix.com
.
