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Partno	Mfg	Dc	Qty	Available	Descript
STD1NB50	ST	N/a	70	avai	N

STD1NB50 ,NSTD1NB50®N - CHANNEL 500V - 7.5Ω - 1.4A IPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD1NB50 500V ..
STD1NB60 ,NSTD1NB60®N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK PowerMESH™ MOSFETPRELIMINARY DATATYPE VDSS RDS( ..
STD1NB80 ,N-CHANNEL 800VSTD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) ..
STD1NB80 ,N-CHANNEL 800VSTD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STD1NB80-1 ,NSTD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) ..
STD1NB80T4 ,N-CHANNEL 800VSTD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STW26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STW26NM60ND ,N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STW28NK60Z ,N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW29NK50Z ,N-CHANNEL 500 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 500 VV Drain ..
STW29NK50ZD ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STW30N65M5 ,N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247Absolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAKTO-220FPTO-247, I²PAKV Gate-source v ..

STD1NB50
N
STD1NB50
N - CHANNEL 500V - 7.5Ω - 1.4A IPAK
PowerMESH MOSFET TYPICAL RDS(on) = 7.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR SMD DPAK VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
March 2000
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤1.4A, di/dt ≤ 150 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD1NB50
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD1NB50
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD1NB50
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD1NB50
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD1NB50
6/8

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