STD1802T4 ,LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORFEATURES Ordering Code Marking ShipmentSTD1802T4 D1802 Tape & Reel■ VERY LOW COLLECTOR TO EMITTERSA ..
STD1805 ,LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ CCFL DRIVERS■ VOLTAGE REGULATORS■ ..
STD1805T4 ,LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTD1805®LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking Shipmen ..
STD1862 , NPN Silicon Transistor
STD19NE06 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD19NE06L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STW20NM50FD ,N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-247 MDMESH POWER MOSFETSTW20NM60N-CHANNEL 600V - 0.26Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM60 600V ..
STW20NM60FD ,N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFETAPPLICATIONSn ZVS PHASE-SHIFT FULL BRIDGECONVERTERS FOR SMPS AND WELDINGEQUIPMENTORDERING INFORMATI ..
STW21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 packageapplicationsDescription6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode a ..
STW220NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)75 VDS GSV Drain-g ..
STD1802-STD1802T4
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STD1802LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
Table 1: GENERAL FEATURES VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING DPAK POWER
PACKAGE IN TAPE & REEL
(Suffix "T4")
APPLICATIONS: CCFL DRIVERS VOLTAGE REGULATORS RELAY DRIVERS HIGH EFFICIENCY LOW VOLTAGE
SWITCHING APPLICATIONS
DESCRIPTION The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
Table 2: ABSOLUTE MAXIMUM RATINGSRev. 3
Table 3: THERMAL DATA
Table 4: ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
STD1802
Figure 5: Base-Emitter Saturation Voltage Figure 6: Base-Emitter On Voltage
Figure 3: Collector-Emitter Saturation Voltage Figure 4: Collector-Emitter Saturation Voltage
Figure 1: Derating Curve Figure 2: DC Current Gain
STD1802
Figure 11: Switching Times Inductive Load
Figure 9: Switching Times Resistive Load Figure 10: Switching Times Inductive Load
Figure 7: Switching Times Resistive Load Figure 8: Switching Times Resistive Load
STD1802
Figure 12: Resistive Load Switching Test Circuit.
Table 5: Revision History
STD1802
STD1802
