STD17NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD17NF03L ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETSTD17NF03LN-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD17 ..
STD17NF03L-1 ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD17NF03LT4 ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD17NF03L-T4 ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTD17NF03L 30 V < 0.05 Ω 17 ASTD17NF03L-1 30 V < 0. ..
STD17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, DPAK STripFET(TM) II Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STW20NA50 ,NSTW20NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTW20NA50 500 V ..
STW20NB50 ,NSTW20NB50®N - CHANNEL 500V - 0.22Ω - 20A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW20NB50 ..
STW20NB50. ,NSTW20NB50®N - CHANNEL 500V - 0.22Ω - 20A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW20NB50 ..
STW20NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STW20NK50Z ,N-CHANNEL 500VSTW20NK50ZN-CHANNEL 500V - 0.23Ω - 17A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwDSS ..
STW20NK70Z ,N-CHANNEL 700VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)700 VDS GSV Drain-g ..
STD17NF03
N-CHANNEL 30V
1/9Aug 2000
STD17NF03LN-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK
STripFET™ POWER MOSFET
(1) ISD ≤17A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V TYPICAL RDS(on) = 0.038Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK
VERSION
DESCRIPTIONThis Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS SOLENOID AND RELAY DRIVERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STD17NF03L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD17NF03L
Thermal Impedence
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area
STD17NF03L
Output Characteristics
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage Capacitance Variations
5/9
STD17NF03L
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
STD17NF03L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
