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Partno	Mfg	Dc	Qty	Available	Descript
STD17NE03L	ST	N/a	344	avai	N

STD17NE03L ,NSTD17NE03L®N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DS ..
STD17NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD17NF03L ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETSTD17NF03LN-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD17 ..
STD17NF03L-1 ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD17NF03LT4 ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD17NF03L-T4 ,N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFETFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTD17NF03L 30 V < 0.05 Ω 17 ASTD17NF03L-1 30 V < 0. ..
STW18NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STW18NK80Z ,N-CHANNEL 800V 0.34 OHM 18A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STW18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247Electrical characteristics(T =25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol Pa ..
STW20NA50 ,NSTW20NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTW20NA50 500 V ..
STW20NB50 ,NSTW20NB50®N - CHANNEL 500V - 0.22Ω - 20A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW20NB50 ..
STW20NB50. ,NSTW20NB50®N - CHANNEL 500V - 0.22Ω - 20A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW20NB50 ..

STD17NE03L
N
STD17NE03L
N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAK
STripFET POWER MOSFET TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 17 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
June 1999
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD17NE03L
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD17NE03L
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