STD17N05 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V ..
STD17N05L ,NSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
STD17N06 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V ..
STD17N06L ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
STD17NE03L ,NSTD17NE03L®N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DS ..
STD17NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW15NB50 ,N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTORSTW15NB50STH15NB50FI®N-CHANNEL 500V - 0.33Ω - 14.6A -T0-247/ISOWATT218 PowerMESH™ MOSFETTYPE V R ..
STW15NK50Z ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STW15NK90Z ,N-CHANNEL 900V 0.40 OHM 15A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
STW16NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW16NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATA TYPE V R IDSS DS(on) ..
STW18NB40 ,N-CHANNEL 400V 0.19 OHM 18.4A TO-247/ISOWATT218 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW18NB40 STH18NB40FIV Drain-source Voltage (V = ..
STW18NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STD17N05-STD17N06
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STD17N05
STD17N06N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
December 1996
ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD17N05/STD17N062/10
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD17N05/STD17N063/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD17N05/STD17N064/10
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STD17N05/STD17N065/10
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive WaveformsSwitching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
STD17N05/STD17N066/10
