STD16NF06-T4 ,N-channel 100VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0V)60 VDS GS V Drain ..
STD17N05 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V ..
STD17N05L ,NSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
STD17N06 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V ..
STD17N06L ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
STD17NE03L ,NSTD17NE03L®N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DS ..
STW13NK60Z ,N-CHANNEL 600VSTP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60Z2 2N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D PAK/I PAK/ ..
STW13NK80Z ,N-CHANNEL 800V 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STW14NC50 ,N-CHANNEL 500V 0.31OHM 14A TO-247 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STW14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP14NK50Z/FP, STB14NK50ZSTB14NK50Z-1, STW14NK50Z2 2N-CHANNEL500V-0.34Ω-14ATO-220/FP/D PAK/I PAK/TO ..
STW14NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STW14NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD16NF06T4-STD16NF06-T4
N-channel 100V
Rev 1
January 2006 1/11
STD16NF06N-Channel 60V - 0.060Ω - 16A - DPAK
STripFET™ II Power MOSFET
General features Typical RDS(on) = 0.060Ω Exceptional dv/dt Capability 100% Avalanche Tested Application Oriented Characterization
DescriptionThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility
Applications Audio Amplifiers Power Tools Automotive Environment
Internal schematic diagram
Order codes
1 Electrical ratings
STD16NF062/11
1 Electrical ratings
Table 1. Absolute maximum ratings
Table 2. Thermal data
STD16NF06 2 Electrical characteristics
3/11
2 Electrical characteristics( TCASE = 25 °C unless otherwise specified )
Table 3. On/off states
Table 5. Switching times
Table 4. Dynamic
2 Electrical characteristics
STD16NF064/11
Note:1 Value limited by wire bonding Garanted when external Rg=4.7 Ω and tf < t fmax.
3Starting TJ = 25°C, ID = 19A, VDD = 18V Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6. Source drain diode
STD16NF06 2 Electrical characteristics
5/11
2.1 Electrical chraracteristics (curves)
Figure 1. Safe Operating Area Figure 2. Thermal Impedance
Figure 3. Output Characteristics Figure 4. Transfer Characteristics
Figure 5. Transconductance Figure 6. Static Drain-Source on Resistance
2 Electrical characteristics
STD16NF066/11
Figure 7. Gate Charge vs Gate-Source Voltage Figure 8. Capacitance Variations
Figure 9. Normalized Gate Threshold Voltage
vs Temperature
Figure 10. Normalized on Resistance vs
Temperature
Figure 11. Source-drain Diode Forward
Characteristics
Figure 12. Normalized Breakdown Voltage vs
Temperature
