STD16NF06L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASETable 5: OFFSymbol Parameter T ..
STD16NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD16NF06T4 ,N-channel 100VElectrical characteristics( T = 25 °C unless otherwise specified )CASETable 3. On/off statesSymbol ..
STD16NF06-T4 ,N-channel 100VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0V)60 VDS GS V Drain ..
STD17N05 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V ..
STD17N05L ,NSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
STW13NB60 ,NSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
STW13NK60Z ,N-CHANNEL 600VSTP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60Z2 2N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D PAK/I PAK/ ..
STW13NK80Z ,N-CHANNEL 800V 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STW14NC50 ,N-CHANNEL 500V 0.31OHM 14A TO-247 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STW14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP14NK50Z/FP, STB14NK50ZSTB14NK50Z-1, STW14NK50Z2 2N-CHANNEL500V-0.34Ω-14ATO-220/FP/D PAK/I PAK/TO ..
STW14NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STD16NF06L-STD16NF06LT4
N-CHANNEL 60V
1/11March 2005
STD16NF06LN-CHANNEL 60V - 0.060 Ω - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
Rev. 3.0
Figure 1:PackageTable 1: General Features TYPICAL RDS(on) = 0.060 Ω LOGIC LEVEL DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS SWITCHING APPLICATIONS
Table 2: Order Codes
Table 3: ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤16A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 20A, VDD= 48V
STD16NF06L
Table 4: THERMAL DATA(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Table 6: ON (5)
Table 7: DYNAMIC
3/11
STD16NF06L
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE(1 )Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
ELECTRICAL CHARACTERISTICS (continued) Figure 4: Thermal Impedance
STD16NF06L
5/11
STD16NF06L
