STD16NE10L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD16NE10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD16NF06L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASETable 5: OFFSymbol Parameter T ..
STD16NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD16NF06T4 ,N-channel 100VElectrical characteristics( T = 25 °C unless otherwise specified )CASETable 3. On/off statesSymbol ..
STD16NF06-T4 ,N-channel 100VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0V)60 VDS GS V Drain ..
STW12NK90Z ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTW12NK90ZN-CHANNEL 900V - 0.72Ω -11A TO-247Zener-Protected SuperMESH™ Power MOSFETTYPE V R I PwDSS ..
STW12NK90Z. ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
STW12NK95Z ,N-CHANNEL 950VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 950 VDS GSV Drain ..
STW13NB60 ,NSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
STW13NK60Z ,N-CHANNEL 600VSTP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60Z2 2N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D PAK/I PAK/ ..
STW13NK80Z ,N-CHANNEL 800V 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STD16NE10L
N
1/8April 2002
STD16NE10LN-CHANNEL 100V - 0.07 Ω - 16A DPAK
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW THRESHOLD DRIVE SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RALAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤16A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 8A, VDD= 30V
INTERNAL SCHEMATIC DIAGRAM
STD16NE10L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STD16NE10LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD16NE10LOutput Characteristics
5/8
STD16NE10LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STD16NE10L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
