STD16NE06 ,NSTD16NE06®N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD16NE06-1 ,N-CHANNEL 60VSTD16NE06®N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD16NE06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD16NE06L-T4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD16NE06-T4 ,N-CHANNEL 60VSTD16NE06®N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD16NE10L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STW120NF10 ,N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 packageAbsolute maximum ratingsValue UnitSymbol ParameterTO-220, TO-247, TO-220FPD²PAKV Drain-source volta ..
STW12NB60 ,N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STW12NC60 ,N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STW12NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)800 VDS GSV Drain- ..
STW12NK80Z. ,N-CHANNEL 800VSTW12NK80ZN-CHANNEL 800V - 0.65Ω - 10.5A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwD ..
STW12NK90Z ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTW12NK90ZN-CHANNEL 900V - 0.72Ω -11A TO-247Zener-Protected SuperMESH™ Power MOSFETTYPE V R I PwDSS ..
STD16NE06
N
STD16NE06N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK
STripFET POWER MOSFET TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique "STripFET" strip-ba-
sed process.The resulting transistor shows extre-
mely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
turing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
February 2000
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD16NE062/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD16NE063/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD16NE064/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD16NE065/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STD16NE066/9
