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Partno	Mfg	Dc	Qty	Available	Descript
STD16NE06-1 \|STD16NE061	ST	N/a	20	avai	N-CHANNEL 60V
STD16NE06-T4 \|STD16NE06T4	ST	N/a	31600	avai	N-CHANNEL 60V

STD16NE06-T4 ,N-CHANNEL 60VSTD16NE06®N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD16NE10L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD16NE10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD16NF06L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASETable 5: OFFSymbol Parameter T ..
STD16NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD16NF06T4 ,N-channel 100VElectrical characteristics( T = 25 °C unless otherwise specified )CASETable 3. On/off statesSymbol ..
STW12NK80Z. ,N-CHANNEL 800VSTW12NK80ZN-CHANNEL 800V - 0.65Ω - 10.5A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwD ..
STW12NK90Z ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTW12NK90ZN-CHANNEL 900V - 0.72Ω -11A TO-247Zener-Protected SuperMESH™ Power MOSFETTYPE V R I PwDSS ..
STW12NK90Z. ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
STW12NK95Z ,N-CHANNEL 950VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 950 VDS GSV Drain ..
STW13NB60 ,NSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
STW13NK60Z ,N-CHANNEL 600VSTP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60Z2 2N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D PAK/I PAK/ ..

STD16NE06-1-STD16NE06-T4
N-CHANNEL 60V
STD16NE06
N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK
STripFET POWER MOSFET TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "STripFET" strip-ba-
sed process.The resulting transistor shows extre-
mely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
turing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
February 2000
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD16NE06
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD16NE06
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD16NE06
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD16NE06
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD16NE06
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