STD15NF10T4 ,N-CHANNEL 100VSTD15NF10N-CHANNEL 100V - 0.060Ω - 23A DPAKLOW GATE CHARGE STripFET™II POWER MOSFETTYPE V R IDSS DS ..
STD15NF10-T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD16NE06 ,NSTD16NE06®N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD16NE06-1 ,N-CHANNEL 60VSTD16NE06®N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD16NE06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD16NE06L-T4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STW11NB80 ,N-CHANNEL 800VSTW11NB80®N-CHANNEL 800V - 0.65Ω - 11A - T0-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW11NB80 ..
STW11NK100Z ,N-CHANNEL 1000V 1.1 OHM 8.3A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)1000 VDS GSV Drain- ..
STW11NK90Z ,N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STW11NM80 ,N-CHANNEL 800 VAbsolute Maximum ratingsSymbol Parameter Value Unit2TO-220/D PAKTO-220FPTO-247V Drain-source Voltag ..
STW11NM80 ,N-CHANNEL 800 Vapplications in particular for Flybackand Forward converter topologies and for ignitioncircuits in ..
STW11NM80 ,N-CHANNEL 800 VAPPLICATIONSThe 800 V MDmesh™ family is very suitable forsingle switch
STD15NF10T4-STD15NF10-T4
N-CHANNEL 100V
1/8April 2002
STD15NF10N-CHANNEL 100V - 0.060Ω - 23A DPAK
LOW GATE CHARGE STripFET™II POWER MOSFET
(1) ISD ≤15A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 15A, VDD = 30V TYPICAL RDS(on) = 0.060Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STD15NF10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STD15NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STD15NF10
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/8
STD15NF10
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STD15NF10
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
