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Partno	Mfg	Dc	Qty	Available	Descript
STD13NM60N	ST	N/a	200	avai	N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package

STD13NM60N ,N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STD150N3LLH6 ,N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STD150NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STD150NH02L-1 ,N-CHANNEL 24VSTD150NH02LN-CHANNEL 24V - 0.003 Ω - 150A ClipPAK™/IPAKSTripFET™ III POWER MOSFETTYPE V R IDSS DS(o ..
STD150NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD15NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STV9936 ,120MHZ ON SCREEN DISPLAY FOR MONITORS WITH 4 TRUE INDEPENDANT WINDOW DISPLAYSFeatures■ Horizontal frequency up to 150 kHz ■ Characters■ On-chip Pixel Clock Generator from 7.68 ..
STV9937 ,120-MHz OSD for Monitors including PictureBooST and 4 Independent Window DisplaysFeatures■ Horizontal frequency up to 150 kHz■ I²C interface for microcontrollers with slave address ..
STVM100DC6F ,I睠 LCD/e-paper VCOM calibratorFeaturesthe VCOM adjustment. This significantly reduces labor costs, increases reliability, and ena ..
STVM100DC6F ,I睠 LCD/e-paper VCOM calibratorBlock diagram . . . . 7Figure 4. Hardware hookup . 7Figure 5. Serial bus data transfe ..
STW10NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220/ TO-220FP TO-2472 2D PAK/I PAKV Drain-sou ..
STW11NB80 ,N-CHANNEL 800VSTW11NB80®N-CHANNEL 800V - 0.65Ω - 11A - T0-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW11NB80 ..

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STD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package
July 2014 DocID024095 Rev 2 1/20
STB13NM60N,
STD13NM60N
N-channel 600 V , 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs
in D²PAK and DPAK packages
Datasheet — production data
Figure 1. Internal schematic diagram
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STB13NM60N, STD13NM60N
2/20 DocID024095 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 D2 PAK, STB13NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 DPAK, STD13NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID024095 Rev 2 3/20
STB13NM60N, STD13NM60N Electrical ratings
1 Electrical ratings



Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STB13NM60N, STD13NM60N
4/20 DocID024095 Rev 2
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7. Switching times
DocID024095 Rev 2 5/20
STB13NM60N, STD13NM60N Electrical characteristics
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%