STD12NF06T4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD12NF06-T4 ,N-CHANNEL 60VSTD12NF06N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD12 ..
STD13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
STD13003T4 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
STD13007 , SWITCHING REGULATOR APPLICATIONS
STD13NM60N ,N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STV9936 ,120MHZ ON SCREEN DISPLAY FOR MONITORS WITH 4 TRUE INDEPENDANT WINDOW DISPLAYSFeatures■ Horizontal frequency up to 150 kHz ■ Characters■ On-chip Pixel Clock Generator from 7.68 ..
STV9937 ,120-MHz OSD for Monitors including PictureBooST and 4 Independent Window DisplaysFeatures■ Horizontal frequency up to 150 kHz■ I²C interface for microcontrollers with slave address ..
STVM100DC6F ,I睠 LCD/e-paper VCOM calibratorFeaturesthe VCOM adjustment. This significantly reduces labor costs, increases reliability, and ena ..
STVM100DC6F ,I睠 LCD/e-paper VCOM calibratorBlock diagram . . . . 7Figure 4. Hardware hookup . 7Figure 5. Serial bus data transfe ..
STW10NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220/ TO-220FP TO-2472 2D PAK/I PAKV Drain-sou ..
STW11NB80 ,N-CHANNEL 800VSTW11NB80®N-CHANNEL 800V - 0.65Ω - 11A - T0-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW11NB80 ..
STD12NF06-1-STD12NF06T4-STD12NF06-T4
N-CHANNEL 60V
1/10December 2001
STD12NF06N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL , AUDIO AMPLIFIERS SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤12A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 6A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STD12NF06
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/10
STD12NF06SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD12NF06 Transfer Characteristics
5/10
STD12NF06Normalized Gate Threshold Voltage vs Temperature .
STD12NF06
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
