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STD12NE06LSTN/a100avaiN-CHANNEL 60V


STD12NE06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD12NF06-1 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD12NF06L-1 ,N-CHANNEL 60VSTD12NF06LN-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD1 ..
STD12NF06L-1 ,N-CHANNEL 60VAPPLICATIONS■ HIGH CURRENT, HIGH SWITCHING SPEED■ SOLENOID AND RELAY DRIVERS■ MOTOR CONTROL, AUDIO ..
STD12NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD12NF06LT4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STV9428 , HIGH SPEED MULTISYNCH ON-SCREEN DISPLAY FOR MONITOR
STV9432 , 100MHz OSD FOR MONITOR
STV9555 ,9.5 NS TRIPLE CHANNEL HIGH VOLTAGE VIDEO AMPLIFIERELECTRICAL CHARACTERISTICS . . . . . 56 THEORY OF OPERATION . . . . 76.1 General ..
STV9556 ,7.5 NS TRIPLE CHANNEL HIGH VOLTAGE VIDEO AMPLIFIERELECTRICAL CHARACTERISTICS . . . . 56 THEORY OF OPERATION . . . . 76.1 General ..
STV9936 ,120MHZ ON SCREEN DISPLAY FOR MONITORS WITH 4 TRUE INDEPENDANT WINDOW DISPLAYSFeatures■ Horizontal frequency up to 150 kHz ■ Characters■ On-chip Pixel Clock Generator from 7.68 ..
STV9937 ,120-MHz OSD for Monitors including PictureBooST and 4 Independent Window DisplaysFeatures■ Horizontal frequency up to 150 kHz■ I²C interface for microcontrollers with slave address ..


STD12NE06L
N-CHANNEL 60V
1/9July 2001
STD12NE06L

N-CHANNEL 60V - 0.09 Ω - 12A IPAK/DPAK
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.09Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
MOTOR CONTROL (DISK DRIVERS, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS

(•) Current limited by the package (1) ISD ≤12A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
STD12NE06L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/9
STD12NE06L

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD12NE06L Transfer Characteristics
5/9
STD12NE06L

Normalized Gate Threshold Voltage vs Temperature .
STD12NE06L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive

Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
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