STD12N06 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V ..
STD12NE06 , N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
STD12NE06 , N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
STD12NE06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD12NF06-1 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD12NF06L-1 ,N-CHANNEL 60VSTD12NF06LN-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD1 ..
STV9427 , HIGH SPEED MULTISYNCH ON-SCREEN DISPLAY FOR MONITOR
STV9427 , HIGH SPEED MULTISYNCH ON-SCREEN DISPLAY FOR MONITOR
STV9428 , HIGH SPEED MULTISYNCH ON-SCREEN DISPLAY FOR MONITOR
STV9432 , 100MHz OSD FOR MONITOR
STV9555 ,9.5 NS TRIPLE CHANNEL HIGH VOLTAGE VIDEO AMPLIFIERELECTRICAL CHARACTERISTICS . . . . . 56 THEORY OF OPERATION . . . . 76.1 General ..
STV9556 ,7.5 NS TRIPLE CHANNEL HIGH VOLTAGE VIDEO AMPLIFIERELECTRICAL CHARACTERISTICS . . . . 56 THEORY OF OPERATION . . . . 76.1 General ..
STD12N05-STD12N06
N
STD12N05
STD12N06N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
December 1996
ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD12N05/STD12N062/10
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD12N05/STD12N063/10
Derating Curve
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance Gate Charge vs Gate-source Voltage
STD12N05/STD12N064/10
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Turn-off Drain-source Voltage Slope Cross-over Time
STD12N05/STD12N065/10
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive WaveformsSwitching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
STD12N05/STD12N066/10
