STD110NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD11NM60N ,N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK packageElectrical characteristics(T =25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol Pa ..
STD11NM60ND ,N-channel 600Vapplications$ DescriptionThe device is an N-channel FDmesh™ II Power MOSFET that belongs to the s ..
STD123ASF , NPN Silicon Transistor
STD123UF , NPN Silicon Transistor
STD123UF , NPN Silicon Transistor
STV9382 ,OPTIMWATT Class-D Vertical Deflection Amplifierapplications, the OPTIMWATT 4 17 -V POWOUT CCSTV9382 is a Class-D vertical deflection booster 16 + ..
STV9383 ,CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR 2.0 AMP TV AND MONITOR APPLICATIONSFunctional DescriptionThe STV9383 is a vertical deflection circuit operating in Class D. Class D is ..
STV9420 ,MULTISYNC ON-SCREEN DISPLAY FOR MONITORSTV9420STV9421MULTISYNC ON-SCREEN DISPLAY FOR MONITOR.CMOS SINGLE CHIP OSD FOR MONITOR.BUILT IN 1 K ..
STV9421 ,MULTISYNC ON-SCREEN DISPLAY FOR MONITORBLOCK DIAGRAMSSTV9420XTAL XTALIN OUTVPXCK TESTDD8 7 5 4 16CKOUT 6 1K RAMHORIZONTAL 4K ROMPage Descr ..
STV9424 , MULTISYNC ON-SCREEN DISPLAY FOR MONITOR
STV9427 , HIGH SPEED MULTISYNCH ON-SCREEN DISPLAY FOR MONITOR
STD110NH02L
N-CHANNEL 24V
1/11February 2003
STD110NH02LN-CHANNEL 24V - 0.0044 Ω - 80A DPAK
STripFET™ III POWER MOSFET TYPICAL RDS(on) = 0.0044 Ω @ 10 V TYPICAL RDS(on) = 0.0056 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThe STD110NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STD110NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (5)
DYNAMIC
3/11
STD110NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (5) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Value limited by wire bonding (6) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(3) Pulse width limited by safe operating area. (7) Gate charge for synchronous operation
(4) Starting Tj = 25 oC, ID = 40A, VDD = 10V .
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area
STD110NH02LOutput Characteristics Transfer Characteristics
5/11
STD110NH02LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
