STD10PF06T4 ,P-CHANNEL 60VAPPLICATIONS■ MOTOR CONTROL■ DC-DC & DC-AC CONVERTERS
STD10PF06T4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD10PF06T4 ,P-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD110NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD11NM60N ,N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK packageElectrical characteristics(T =25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol Pa ..
STD11NM60ND ,N-channel 600Vapplications$ DescriptionThe device is an N-channel FDmesh™ II Power MOSFET that belongs to the s ..
STV9380A ,CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR 2.5 AMP TV AND MONITOR APPLICATIONSFunctional DescriptionThe STV9380A is a vertical deflection circuit operating in Class D. Class D i ..
STV9381 ,CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR 3 APP MONITOR/TV APPLICATIONS WITH 80 V INTERNAL FLYBACK GENERATORFEATURES■ HIGH EFFICIENCY POWER AMPLIFIER■ NO HEATSINK■ SPLIT SUPPLY■ INTERNAL FLYBACK GENERATOR■ O ..
STV9382 ,OPTIMWATT Class-D Vertical Deflection AmplifierFunctional DescriptionThe STV9382 is a vertical deflection circuit operating in Class D. Class D is ..
STV9382 ,OPTIMWATT Class-D Vertical Deflection Amplifierapplications, the OPTIMWATT 4 17 -V POWOUT CCSTV9382 is a Class-D vertical deflection booster 16 + ..
STV9383 ,CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR 2.0 AMP TV AND MONITOR APPLICATIONSFunctional DescriptionThe STV9383 is a vertical deflection circuit operating in Class D. Class D is ..
STV9420 ,MULTISYNC ON-SCREEN DISPLAY FOR MONITORSTV9420STV9421MULTISYNC ON-SCREEN DISPLAY FOR MONITOR.CMOS SINGLE CHIP OSD FOR MONITOR.BUILT IN 1 K ..
STD10PF06-1-STD10PF06T4
P-CHANNEL 60V
1/9March 2002
STD10PF06P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
(1) ISD ≤10A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
STD10PF06
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (*)
DYNAMIC
3/9
STD10PF06
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area
STD10PF06Output Characteristics Transfer Characteristics
5/9
STD10PF06Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STD10PF06
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
