STD10NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD10NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD10NF10T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD10NM65N ,N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFETElectrical characteristics(T =25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol Pa ..
STD10PF06 ,P-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD10PF06-1 ,P-CHANNEL 60VSTD10PF06P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD10 ..
STV9379 ,VERTICAL DEFLECTION BOOSTERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage (Pin 2) (see note 1) 50 VSV Fly ..
STV9379A ,VERTICAL DEFLECTION BOOSTERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage (Pin 2) (Note 1)50VSV Flyback P ..
STV9379F ,VERTICAL DEFLECTION BOOSTERSTV9379FVERTICAL DEFLECTION BOOSTER.POWER AMPLIFIER.THERMAL PROTECTION.OUTPUT CURRENT UP TO 2.0APP. ..
STV9379FA ,VERTICAL DEFLECTION BOOSTERAbsolute Maximum RatingsSymbol Parameter Value UnitV S Supply Voltage (Pin 2) (see note 1) 50 VV6 F ..
STV9380A ,CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR 2.5 AMP TV AND MONITOR APPLICATIONSFunctional DescriptionThe STV9380A is a vertical deflection circuit operating in Class D. Class D i ..
STV9381 ,CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR 3 APP MONITOR/TV APPLICATIONS WITH 80 V INTERNAL FLYBACK GENERATORFEATURES■ HIGH EFFICIENCY POWER AMPLIFIER■ NO HEATSINK■ SPLIT SUPPLY■ INTERNAL FLYBACK GENERATOR■ O ..
STD10NF10
N-CHANNEL 100V
1/10June 2002
STD10NF10N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.115Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤13A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD = 50V
INTERNAL SCHEMATIC DIAGRAM
STD10NF10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/10
STD10NF10SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD10NF10 Transfer Characteristics
5/10
STD10NF10Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STD10NF10
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
