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Partno	Mfg	Dc	Qty	Available	Descript
STD100N3LF3	ST	N/a	2500	avai	N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package

STD100N3LF3 ,N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK packageElectrical characteristics (T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
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STD100NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD100NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD100NH03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD100NH03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STV9306 ,BUS CONTROLLED VERTICAL DEFLECTION SYSTEM WITH EAST/WEST CORRECTION OUTPUT CIRCUITapplications. It integrates both the verticaldeflection and E/W correction circuitries neces-sary i ..
STV9306B ,BUS-CONTROLLED VERTICAL DEFLECTION SYSTEM WITH EAST/WEST CORRECTION OUTPUT CIRCUITElectrical CharacteristicsoV = 24 V, R = 0.5 Ω, Normal mode, T = 25 C, unless otherwise specified.S ..
STV9325 ,40V; vertical deflection booster for 2.5-app TV/monitor applications with 70-V flyback generatorElectrical Characteristics(V = 34 V, T = 25°C, unless otherwise specified)S AMB Symbol Parameter Te ..
STV9326 ,Vertical Deflection Booster for 3-App TV/Monitor Applications with 60-V Flyback GeneratorAbsolute Maximum Ratings Symbol Parameter Value UnitVoltageV Supply Voltage (pin 2) - Note 1 and No ..
STV9378 , VERTICAL DEFLECTION BOOSTER
STV9379 ,VERTICAL DEFLECTION BOOSTERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage (Pin 2) (see note 1) 50 VSV Fly ..

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STD100N3LF3
N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package

November 2009 Doc ID 13206 Rev 3 1/14
STD100N3LF3
N-channel 30 V , 0.0045 Ω , 80 A, DP AK
planar ST ripFET™ II Power MOSFET
Features 100% avalanche tested Logic level threshold
Applications Switching application Automotive
Description
This STripFET™ II Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.
Figure 1. Internal schematic diagram
Current limited by package
Table 1. Device summary

Contents STD100N3LF3
2/14 Doc ID 13206 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD100N3LF3 Electrical ratings
Doc ID 13206 Rev 3 3/14

1 Electrical ratings
Table 2. Absolute maximum ratings Current limited by package. Pulse width limited by safe operating area ISD ≤ 80A, di/dt ≤ 360 A/µs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX
Table 3. Thermal data
Table 4. Avalanche characteristics

Electrical characteristics STD100N3LF3
4/14 Doc ID 13206 Rev 3
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: pulse duration=300µs, duty cycle 1.5%
STD100N3LF3 Electrical characteristics
Doc ID 13206 Rev 3 5/14

Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%

Electrical characteristics STD100N3LF3
6/14 Doc ID 13206 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
STD100N3LF3 Electrical characteristics
Doc ID 13206 Rev 3 7/14

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized BV DSS vs temperature
Figure 12. Normalized on resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics