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STC5NF30V
N-CHANNEL 30V
1/8June 2003
STC5NF30VN-CHANNEL 30V - 0.027 Ω - 5A TSSOP8
2.7V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.027 Ω @ 4.5 V TYPICAL RDS(on) = 0.031 Ω @ 2.7 V ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STC5NF30V
THERMAL DATA(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec(**) When Mounted on minimum recommended footprint
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STC5NF30VSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STC5NF30V Transfer Characteristics
5/8
STC5NF30VNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STC5NF30V
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuits For Resistive Load
