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STBV32STN/a25000avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


STBV32 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV32®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
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STV5345/T , TELETEXT DECODER WITH 8 INTEGRATED PAGES
STV5347 , MONOCHIP TELETEXT AND VPS DECODER WITH 4 INTEGRATED PAGES
STV5348 ,MONOCHIP TELETEXT AND VPS DECODER WITH 8 INTEGRATED PAGESfeatures allow selectable master/slave RGB REF 11 18 L23synchronization configurations. The STV5348 ..
STV5348 ,MONOCHIP TELETEXT AND VPS DECODER WITH 8 INTEGRATED PAGESSTV5348STV5348/H - STV5348/TMONOCHIP TELETEXT AND VPS DECODERWITH 8 INTEGRATED PAGES


STBV32
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STBV32
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION

The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STBV32 is designed for use in compact
fluorescent lamp application.
Ordering codes:
STBV32 (shipment in bulk)
STBV32-AP (shipment in ammopack)
August 2001
ABSOLUTE MAXIMUM RATINGS

1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %.
STBV32

2/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
STBV32

3/7
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
STBV32

4/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Resistive Load Switching Test Circuits.
STBV32

5/7
STBV32
6/7
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