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STBV32-AP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
July 2008 Rev 8 1/11
STBV32High voltage fast-switching NPN power transistor
Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
Applications Compact fluorescent lamps (CFLS) SMPS for battery charger
DescriptionThe device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV32G and STBV32G-AP are supplied
using halogen-free molding compound.
Figure 1. Internal schematic diagram
Table 1. Device summary
Electrical ratings STBV322/11
1 Electrical ratings
Table 2. Absolute maximum rating
Table 3. Thermal data
STBV32 Electrical characteristics 3/11
2 Electrical characteristics case = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Electrical characteristics STBV324/11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. Output characteristics Figure 5. Reverse biased safe
operating area
Figure 6. DC current gain Figure 7. DC current gain
STBV32 Electrical characteristics 5/11
Figure 8. Collector-emitter saturation
voltage
Figure 9. Base-emitter saturation
voltage
Figure 10. Inductive load switching time Figure 11. Resistive load switching time
Electrical characteristics STBV326/11
2.2 Test circuits
Figure 12. Resistive load switching test circuit
Figure 13. Inductive load switching test circuit
