STW9NK70Z ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK70Z - STP9NK70ZFPSTB9NK70Z - STB9NK70Z-1 - STW9NK70Z2 2N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D ..
STW9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITCH MODE POWER SUPPLIES■ DC-AC CONVERTERS FOR ..
STW9NK95Z ,N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STWD100NPWY3F ,WatchdogAbsolute maximum ratings . 15Table 4. Operating and AC measurement conditions . . . . 16Ta ..
STWD100NYWY3F ,WatchdogFeatures Current consumption 13 μA typ. Available watchdog timeout periods are 3.4 ms, 6.3 ms, 10 ..
STX13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTX13003®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ ST13003 SILICON IN TO-92 PACKAGE■ MEDIUM ..
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
T810-600B-TR ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-800B ,Triac, 800V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
STB9NK70Z-1-STP9NK70Z-STP9NK70ZFP-STW9NK70Z
N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/14April 2002
STP9NK70Z - STP9NK70ZFP
STB9NK70Z - STB9NK70Z-1 - STW9NK70ZN-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2 PAK/I2 PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤7.5A, di/dt ≤200 μA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
3/14
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Safe Operating Area For TO-247
Safe Operating Area For TO-220FP
Thermal Impedance For TO-247
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
5/14
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Capacitance VariationsGate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
7/14
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
