STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB9NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
STB9NC60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STV2310D ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb InputFEATURES■ Worldwide TV Standards Compatible■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder■ NTSC/ ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STV3500 ,Integrated Up-Converter with 32-bit CPU Core with Video Enhancers and Bitmap On-Screen DisplayFEATURES – Progressive display mode (60 Hz, 525 lines) for full-screen graphic planes■ Versatile in ..
STV3550 ,LCD and Matrix Display TV ProcessorFeaturesVideo and Graphic planes■ Fully-programmable Digital Video Output Stage for direct ■ High-P ..
STV3550B ,LCD and Matrix Display TV ProcessorFunctional Description .....977.7.3 PIO Pad Connection & Control .987.7.4 Clock Generation ....997. ..
STB95NF03T4
N-CHANNEL 30V
STB95NF03N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(1) ISD ≤ 95A, di/dt ≤ 150A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
INTERNAL SCHEMATIC DIAGRAM
STB95NF03
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
STB95NF03SWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•) Pulse width limited by Tjmax
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area
STB95NF03Gate Charge vs Gate-source Voltage Capacitance Variations
STB95NF03 . .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
