STB90NF03LT4 ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB9NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
STV2310D ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb InputFEATURES■ Worldwide TV Standards Compatible■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder■ NTSC/ ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STV3500 ,Integrated Up-Converter with 32-bit CPU Core with Video Enhancers and Bitmap On-Screen DisplayFEATURES – Progressive display mode (60 Hz, 525 lines) for full-screen graphic planes■ Versatile in ..
STV3550 ,LCD and Matrix Display TV ProcessorFeaturesVideo and Graphic planes■ Fully-programmable Digital Video Output Stage for direct ■ High-P ..
STV3550B ,LCD and Matrix Display TV ProcessorFunctional Description .....977.7.3 PIO Pad Connection & Control .987.7.4 Clock Generation ....997. ..
STB90NF03LT4
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
1/8October 2001
STB90NF03LN-CHANNEL 30V - 0.0056Ω - 90A D2 PAK
LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.0056 Ω TYPICAL Qg = 35 nC @ 5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTIONThis application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STB90NF03L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STB90NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STB90NF03L
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics
5/8
STB90NF03L
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STB90NF03L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
