STB85NF3LL-1 ,N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LLT4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LL-T4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSTB85NF3LL2N-CHANNEL 30V - 0.006Ω - 85A D PAKLOW GATE CHARGE STripFET™II POWER MOSFETTYPE V R IDSS ..
STB85NF55T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB8NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB8NA50 500 V < ..
STB8NC70Z-1 ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STV2286 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORapplications■ Two Horizontal Deflection PLLs■ Vertical Countdown■ Half Contrast■ APR (Automatic RGB ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1
STV2310 ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb Input® ST STV23 V231 10 0Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb I ..
STV2310D ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb InputFEATURES■ Worldwide TV Standards Compatible■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder■ NTSC/ ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STB85NF3LL-1
N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFET
1/9
PRELIMINARY DATAMarch 2001
STP85NF3LL
STB85NF3LL-1N-CHANNEL 30V - 0.006Ω - 85A TO-220/I2 PAK
LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.0075 Ω (@4.5V) OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTIONThis application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP85NF3LL/STB85NF3LL-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP85NF3LL/STB85NF3LL-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STP85NF3LL/STB85NF3LL-1
Transconductance
Output Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
Transfer Characteristics
5/9
STP85NF3LL/STB85NF3LL-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STP85NF3LL/STB85NF3LL-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
