STB80NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STB80NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB80NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ HIGH-EFFICIENCY DC-DC CONVERTERS■ UPS AND MOTOR CONTROL
STB80NF10T4 ,N-CHANNEL 100VSTB80NF10N-CHANNEL 100V - 0.012Ω - 80A D2PAKLOW GATE CHARGE STripFET™ POWER MOSFETTYPE V R IDSS DS( ..
STB80NF55-06 ,N-CHANNEL 55VSTB80NF55-06STP80NF55-06 STP80NF55-06FP2N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D PAKSTripFET ..
STB80NF55-06T4 ,N-CHANNEL 55VSTB80NF55-06 STB80NF55-06-1STP80NF55-06 STP80NF55-06FP²N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220F ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STV2286 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORapplications■ Two Horizontal Deflection PLLs■ Vertical Countdown■ Half Contrast■ APR (Automatic RGB ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1
STB80NF10 -STB80NF10T4
N-CHANNEL 100V
1/8February 2001
STB80NF10N-CHANNEL 100V - 0.012Ω - 80A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
(1) ISD ≤80A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 80A, VDD = 50V TYPICAL RDS(on) = 0.012Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
(*) Limited by Package
STB80NF10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STB80NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
STB80NF10
Output Characteristics
Capacitance VariationsGate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
5/8
STB80NF10
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STB80NF10
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
