STB80NE03L-06 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE03L-06T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STB80NF03L-04 ,N-CHANNEL 30VSTP80NF03L-04STB80NF03L-04 STB80NF03L-04-12 2N-CHANNEL 30V - 0.0035 Ω - 80A D PAK/I PAK/TO-220STrip ..
STB80NF03L-04 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80NF03L-04-1 ,N-CHANNEL 30VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ MOTOR CONTROL, AUDIO AMPLIFIERS■ DC-DC & DC-AC CO ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STB80NE03L-06
N-CHANNEL 30V
1/9February 2003
STB80NE03L-06
STB80NE03L-06-1N-CHANNEL 30V- 0.005Ω -80A D2 PAK/I2 PAK
STripFET™ POWER MOSFET
(1)ISD ≤804A, di/dt ≤300A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX. TYPICAL RDS(on)= 0.005Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100°C 100% AVALANCHE TESTED
DESCRIPTIONThis Power MOSFETis the latest developmentof
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps thereforea re-
markable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL,AUDIO AMPLIFIERS DC-DC& DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limitedby safe operating area
STB80NE03L-06/ STB80NE03L-06-12/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/9
STB80NE03L-06/ STB80NE03L-06-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Safe Operating Area Thermal Impedence
STB80NE03L-06/ STB80NE03L-06-14/9
Gate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
Output Characteristics Transfer Characteristics
5/9
STB80NE03L-06/ STB80NE03L-06-1
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
STB80NE03L-06/ STB80NE03L-06-16/9
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
