STB7NC80Z ,N-CHANNEL 800VAPPLICATIONS■ SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION■ WELDING EQUIPMENTO ..
STB7NK80ZT4 ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP7NK80ZSTB7NK80Z STP7NK80ZFPSTB7NK80Z-1V Drain ..
STB80NE03L-06 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE03L-06T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STB80NF03L-04 ,N-CHANNEL 30VSTP80NF03L-04STB80NF03L-04 STB80NF03L-04-12 2N-CHANNEL 30V - 0.0035 Ω - 80A D PAK/I PAK/TO-220STrip ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STB7NC80Z-STP7NC80Z-STP7NC80ZFP-STP7NC80ZFP.
N-CHANNEL 800V
1/13December 2002
STP7NC80Z- STP7NC80ZFP
STB7NC80Z- STB7NC80Z-1N-CHANNEL 800V- 1.3Ω- 6.5A TO-220/FP/D2 PAK/I2 PAK
Zener-Protected PowerMESH™III MOSFET TYPICAL RDS(on)= 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTIONThe third generationof MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performanceas request-bya large varietyof single-switch applications.
APPLICATIONS SINGLE-ENDED SMPSIN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ORDERING INFORMATION
STP7NC80Z- STP7NC80ZFP- STB7NC80Z- STB7NC80Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP7NC80Z- STP7NC80ZFP- STB7NC80Z- STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. ΔVBV=αT(25°-T) BVGSO(25°)
STP7NC80Z- STP7NC80ZFP- STB7NC80Z- STB7NC80Z-14/13
Output Characteristics Transfer Characteristics
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
5/13
STP7NC80Z- STP7NC80ZFP- STB7NC80Z- STB7NC80Z-1
Normalized Gate Threshold Voltagevs Temp.
Capacitance Variations
Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
STP7NC80Z- STP7NC80ZFP- STB7NC80Z- STB7NC80Z-16/13
Source-drain Diode Forward Characteristics
7/13
STP7NC80Z- STP7NC80ZFP- STB7NC80Z- STB7NC80Z-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
