STB7NC70Z-1 ,N-CHANNEL 700V 1.1OHM 6A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFETSTP7NC70Z - STP7NC70ZFPSTB7NC70Z - STB7NC70Z-12 2N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D PAK/I PAKZe ..
STB7NC80Z ,N-CHANNEL 800VAPPLICATIONS■ SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION■ WELDING EQUIPMENTO ..
STB7NK80ZT4 ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP7NK80ZSTB7NK80Z STP7NK80ZFPSTB7NK80Z-1V Drain ..
STB80NE03L-06 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE03L-06T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STB7NC70Z-STB7NC70Z-1-STP7NC70Z-STP7NC70ZFP
N-CHANNEL 700V
1/13January 2003
STP7NC70Z- STP7NC70ZFP
STB7NC70Z- STB7NC70Z-1N-CHANNEL 700V- 1.1Ω - 6A TO-220/FP/D2 PAK/I2 PAK
Zener-Protected PowerMESH™III MOSFET TYPICAL RDS(on)= 1.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTIONThe third generationof MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performanceas requestedbya large variety single-switch applications.
APPLICATIONS SINGLE-ENDED SMPSIN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
(1)ISD ≤6A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
(2).Limited onlyby maximum temperature allowed
STP7NC70Z- STP7NC70ZFP- STB7NC70Z- STB7NC70Z-12/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/13
STP7NC70Z- STP7NC70ZFP- STB7NC70Z- STB7NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. ΔVBV= αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionally applied from gateto source.In this respect the Zener voltageis appropiateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
STP7NC70Z- STP7NC70ZFP- STB7NC70Z- STB7NC70Z-14/13
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220/D2PAK/I2PAK
5/13
STP7NC70Z- STP7NC70ZFP- STB7NC70Z- STB7NC70Z-1
Gate Chargevs Gate-source Voltage
Transconductance
STP7NC70Z- STP7NC70ZFP- STB7NC70Z- STB7NC70Z-16/13
7/13
STP7NC70Z- STP7NC70ZFP- STB7NC70Z- STB7NC70Z-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
