STB70NFS03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Dain-source Voltage (V = 0) 30 VDS GSV Drain-g ..
STB70NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB7101 ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value Unit oV Supply voltage 4.5 Vcc T = +25 C ..
STB7101TR ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERapplications43 4 3(0.9/1.9GHz), uses a 20 GHz F silicon bipolarTprocess. This IC is a wide range am ..
STB7102TR ,0.1/2.5 GHZ SI MMIC BUFFER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value UnitVSupply voltage 3.3 VccoTStorage tem ..
STB75NF20 ,N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STB70NFS03LT4
N-CHANNEL 30V
1/9September 2003
STB70NFS03LN-CHANNEL 30V - 0.0075 Ω - 70A D²PAK
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTIONThis product associates a Power MOSFET of the
STMicroelectronics unique “Single Feature Size”
strip-based process and a low drop Schottky di-
ode. The transistore shows the best trade-off be-
tween on-resistance and gate charge. Used as low
side in buck regulators, the product is the solution
in terms of conduction losses and space saving.
MOSFET ABSOLUTE MAXIMUM RATINGS
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM(•) Current limited by the package (1) ISD ≤70A, di/dt ≤350A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 35A, VDD = 25V
STB70NFS03L
TERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)OFF
ON (*)
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC
3/9
STB70NFS03LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB70NFS03LOutput Characteristics Transfer Characteristics
5/9
STB70NFS03L .
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STB70NFS03L
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuits For Resistive Load
