STB6NK60ZT4 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
STB6NK90Z ,N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK90Z / STB6NK90Z STP6NK90ZFPV Drain-source ..
STB6NK90ZT4 ,N-CHANNEL 900VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB70NF02LT4 ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB70NF03L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB70NF03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STV2118B ,BUS CONTROLLED PAL/SECAM/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT chroma and video circuits. The burst gate pulseis also ..
STV2145 ,I 2 C BUS CONTROLLED EAST-WEST AND VERTICAL INTERFACEapplications covering standard4/3 screen format and new 16/9 format with zoomING) TO ADAPT DEFLECTI ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STB6NK60ZT4
N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/13April 2003
STP6NK60Z- STP6NK60ZFP
STB6NK60Z- STB6NK60Z-1N-CHANNEL 600V- 1Ω- 6A TO-220/TO-220FP/D2 PAK/I2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)=1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤6A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto souce.In this respect the Zener voltageis appropriateto achievean efficient and cost-
effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the usage external components.
3/13
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-14/13
Safe Operating Area for TO-220FP
Thermal Impedancefor TO-220/ D2PAK/ I2PAK
SafeOperatingArea for TO-220/ D2PAK/ I2PAK
Thermal Impedance for TO-220FP
Transfer CharacteristicsOutput Characteristics
5/13
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-1
Gate Chargevs Gate-source Voltage
Transconductance
Normalized On Resistancevs Temperature
Capacitance Variations
Normalized Gate Threshold Voltagevs Temp.
Static Drain-source On Resistance
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-16/13
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
7/13
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
