STP6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
STP6NK60ZFP ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STP6NK90Z ,N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK90Z - STP6NK90ZFPSTB6NK90Z2N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D PAKZener-Protected ..
STP6NK90ZFP ,N-CHANNEL 900VSTP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90Z2N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/FP/D PAK/TO-247Ze ..
STP70NF03L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STP75NE75 ,N-CHANNEL 75VSTP75NE75STP75NE75FP®N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V R ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STB6NK60Z-STB6NK60Z-1-STP6NK60Z -STP6NK60ZFP
N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/13March 2003
STP6NK60Z- STP6NK60ZFP
STB6NK60Z- STB6NK60Z-1N-CHANNEL 600V- 1Ω- 6A TO-220/TO-220FP/D2 PAK/I2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)=1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤6A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto souce.In this respect the Zener voltageis appropriateto achievean efficient and cost-
effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the usage external components.
3/13
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-14/13
Safe Operating Area for TO-220FPSafeOperatingArea for TO-220/ D2PAK/ I2PAK
Thermal Impedance for TO-220FPThermal Impedancefor TO-220/ D2PAK/ I2PAK
Transfer CharacteristicsOutput Characteristics
5/13
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-1
Gate Chargevs Gate-source Voltage
Transconductance
Normalized On Resistancevs Temperature
Capacitance Variations
Normalized Gate Threshold Voltagevs Temp.
Static Drain-source On Resistance
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-16/13
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
7/13
STP6NK60Z- STP6NK60ZFP- STB6NK60Z- STB6NK60Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
