STB6NC60-1 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NC60T4 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STB6NK60Z-1 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB6NK60ZT4 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
STB6NK90Z ,N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK90Z / STB6NK90Z STP6NK90ZFPV Drain-source ..
STV2110B ,PAL-SECAM luma-chroma & deflection processorFUNCTIONAL DESCRIPTIONDEFLECTION The dynamic range is over than 30dB.The chrominance output signal ..
STV2112B ,BUS-CONTROLLED PAL/SECAM TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT level when V increases from 0 to 6.8V. OnCCshutting do ..
STV2116A ,BUS CONTROLLED PAL/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT - frame blanking pulse :from line 0 to 21 in 50Hz mode ..
STV2118B ,BUS CONTROLLED PAL/SECAM/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT chroma and video circuits. The burst gate pulseis also ..
STV2145 ,I 2 C BUS CONTROLLED EAST-WEST AND VERTICAL INTERFACEapplications covering standard4/3 screen format and new 16/9 format with zoomING) TO ADAPT DEFLECTI ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STB6NC60-1-STP6NC60-STP6NC60FP-STP6NC60FP.
N-CHANNEL 600V 1.0 OHM
1/10May 2001
STP6NC60 - STP6NC60FP
STB6NC60-1N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK
PowerMESH™II MOSFET TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1)ISD ≤6A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STP6NC60/FP/STB6NC60-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STP6NC60/FP/STB6NC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP
STP6NC60/FP/STB6NC60-1
Transfer Characteristics
Thermal Impedence for TO-220FPThermal Impedence for TO-220/I2PAK
Output Characteristics
Transconductance Static Drain-source On Resistance
5/10
STP6NC60/FP/STB6NC60-1
Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STP6NC60/FP/STB6NC60-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
