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Partno	Mfg	Dc	Qty	Available	Descript
STB6NA60	ST	N/a	15	avai	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

STB6NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB6NA60 600 V < ..
STB6NB50T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB6NB50®N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB6NB ..
STB6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
STB6NC60-1 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NC60T4 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STV2050A ,AUTOMATIC MULTISCAN DIGITAL CONVERGENCE PROCESSORTable of Contents6.6 DATA TRANSFER BETWEEN RAM AND EEPROM . . . . 296.7 MASTER CLOCK FREQUENCY ..
STV2050ATR ,AUTOMATIC MULTISCAN DIGITAL CONVERGENCE PROCESSORapplications■ 6 Convergence channels■ 14-bit embedded DACs■ 1 Focus channel■ Second order interpola ..
STV2110B ,PAL-SECAM luma-chroma & deflection processorFUNCTIONAL DESCRIPTIONDEFLECTION The dynamic range is over than 30dB.The chrominance output signal ..
STV2112B ,BUS-CONTROLLED PAL/SECAM TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT level when V increases from 0 to 6.8V. OnCCshutting do ..
STV2116A ,BUS CONTROLLED PAL/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT - frame blanking pulse :from line 0 to 21 in 50Hz mode ..
STV2118B ,BUS CONTROLLED PAL/SECAM/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT chroma and video circuits. The burst gate pulseis also ..

STB6NA60
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STB6NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area
October 1995
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STB6NA60
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STB6NA60
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STB6NA60
4/10
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STB6NA60
5/10
Switching Safe Operating Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
Accidental Overload Area
Fig. 2: Unclamped Inductive Waveform
STB6NA60
6/10

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