STB60NE06L-16 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB60NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB60NF06L STP60NF06LFPSTP60NF06LV Drain-source ..
STB60NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STB60NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB6100 ,STB6100 databriefapplications. The STB6100 is controlled by a simple two wireinterface and has been designed to mini ..
STB6100 ,STB6100 databriefapplications such as high definition TV andbroadband internet.Figure 2. Integrated silicon tuner3 3 ..
STV1601A ,SERIAL INTERFACE TRANSMISSION ENCODERAPPLICATIONS EXAMPLES.Serial data transmission of digital televisionsignal 525-625 lines.4:2:2 comp ..
STV160NF02L ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LAT4 ,N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LT4 ,N-CHANNEL 20VSTV160NF02LN-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) D ..
STV160NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF03LA ,N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB60NE06L-16
N-CHANNEL 60V
1/9March 2002
STB60NE06L-16N-CHANNEL 60V - 0.014 Ω - 60A D2 PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 o C OPERATING TEMPERATURE LOW THRESHOLD DRIVE SURFACE-MOUNTING D2 PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤60A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60A, VDD = 35V
STB60NE06L-16
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF (*)
DYNAMIC
3/9
STB60NE06L-16SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. •)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB60NE06L-16
5/9
STB60NE06L-16Normalized Gate Threshold Voltage vs Temperature .
STB60NE06L-16
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
