STB5NK50Z ,N-CHANNEL 500VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTB5NK50Z 500 V < 1.5 Ω 4.4 A 70 WSTB5NK50Z-1 50 ..
STB6000 ,QPSK DVB/DIRECTVTM DIRECT CONVERSION TUNER IC STB6000applications. The STB6000 is controlled by a simple two wire interface and has been designed to min ..
STB6000 ,QPSK DVB/DIRECTVTM DIRECT CONVERSION TUNER IC STB6000® STB6000TMQPSK DVB/DIRECTV direct conversion tuner ICDATA BRIEFsatellite front end that can seamle ..
STB60N03L-10 ,N
STB60NE06L-16 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB60NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB60NF06L STP60NF06LFPSTP60NF06LV Drain-source ..
STV1601A ,SERIAL INTERFACE TRANSMISSION ENCODERAPPLICATIONS EXAMPLES.Serial data transmission of digital televisionsignal 525-625 lines.4:2:2 comp ..
STV160NF02L ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LAT4 ,N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LT4 ,N-CHANNEL 20VSTV160NF02LN-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) D ..
STV160NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF03LA ,N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB5NK50Z-STD5NK50ZT4
N-CHANNEL 500V
1/17June 2004
STB5NK50Z/-1 - STD5NK50Z/-1
STP5NK50Z - STP5NK50ZFPN-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2 PAK
Zener-Protected SuperMESH™MOSFET
Rev. 4
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP2/17
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤4.4A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP4/17
Figure 3: Safe Operating Area For DPAK/IPAK/2 PAK/I2 PAK/TO-220
Figure 4: Thermal Impedance For DPAK/IPAK/2 PAK/I2 PAK/TO-220
Figure 5: Output Characteristics
Figure 6: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 8: Transfer Characteristics
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STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 12: Static Drain-Source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalized On Resistance vs Tem-
perature
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP6/17
Figure 15: Source-Drain Forward Characteris-
tics
Temperature
Figure 17: Normalized BVDSS vs Temperature
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STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 18: Unclamped Inductive Load Test Cir-
cuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP8/17
9/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
