STB5NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NC50STP5NC50FPSTB5NC50/-1V Drain-source Volt ..
STB5NC50-1 ,N-CHANNEL 500VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITH MODE POWER SUPPLIES (SMPS)■ DC-AC CONVERTER ..
STB5NC70Z ,N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB5NK50Z ,N-CHANNEL 500VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTB5NK50Z 500 V < 1.5 Ω 4.4 A 70 WSTB5NK50Z-1 50 ..
STB6000 ,QPSK DVB/DIRECTVTM DIRECT CONVERSION TUNER IC STB6000applications. The STB6000 is controlled by a simple two wire interface and has been designed to min ..
STB6000 ,QPSK DVB/DIRECTVTM DIRECT CONVERSION TUNER IC STB6000® STB6000TMQPSK DVB/DIRECTV direct conversion tuner ICDATA BRIEFsatellite front end that can seamle ..
STV0987B/TR ,8 Megapixel imaging processorfeatures include face tracking, video stabilization and a smooth digital zoom, bringing an outstand ..
STV1601A ,SERIAL INTERFACE TRANSMISSION ENCODERAPPLICATIONS EXAMPLES.Serial data transmission of digital televisionsignal 525-625 lines.4:2:2 comp ..
STV160NF02L ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LAT4 ,N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LT4 ,N-CHANNEL 20VSTV160NF02LN-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) D ..
STV160NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB5NC50-STB5NC50-1-STP5NC50-STP5NC50FP
N-CHANNEL 500V
1/12December 2002
STP5NC50- STP5NC50FP
STB5NC50- STB5NC50-1N-CHANNEL 500V- 1.3Ω - 5.5A TO-220/FP/D2 PAK/I2 PAK
PowerMesh™II MOSFET TYPICAL RDS(on)= 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION
STP5NC50- STP5NC50FP- STB5NC50- STB5NC50-12/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF(1)
DYNAMIC
3/12
STP5NC50- STP5NC50FP- STB5NC50- STB5NC50-1
Safe Operating Area for TO-220FPSafe Operating Area for TO-220/D2PAK/I2PAK
ELECTRICAL CHARACTERISTICS(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulseduration=300μs,duty cycle1.5%. Pulse width limitedby safe operating area.
STP5NC50- STP5NC50FP- STB5NC50- STB5NC50-14/12
Thermal Impedence for TO-220/D2PAK/I2PAK
Output Characteristics
Transconductance Static Drain-source On Resistance
5/12
STP5NC50- STP5NC50FP- STB5NC50- STB5NC50-1
Source-drain Diode Forward
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp. Capacitance Variations
STP5NC50- STP5NC50FP- STB5NC50- STB5NC50-16/12
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
