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Partno	Mfg	Dc	Qty	Available	Descript
STB4NK60Z	ST	N/a	500	avai	N-CHANNEL 600V
STD4NK60Z	ST	N/a	2266	avai	N-CHANNEL 600V
STD4NK60Z-1 \|STD4NK60Z1	STM	N/a	10000	avai	N-CHANNEL 600V
STP4NK60Z	ST	N/a	7000	avai	N-CHANNEL 600V
STP4NK60Z. \|STP4NK60Z	ST	N/a	23	avai	N-CHANNEL 600V
STP4NK60ZFP	STM	N/a	50	avai	N-CHANNEL 600V

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STD4NK60ZT4 ,N-CHANNEL 600VSTP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-12 2N-CHANNEL600V-1.76Ω-4ATO-220/FP/ ..
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STD4NK80ZT4 ,N-CHANNEL 800VSTP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAKZen ..
STD4NS25 ,N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 250 VDS GSV Drain ..
STD4NS25T4 ,N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 250 VDS GSV Drain ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
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STB4NK60Z-STD4NK60Z-STD4NK60Z-1-STP4NK60Z-STP4NK60Z.-STP4NK60ZFP
N-CHANNEL 600V
1/16March 2003
STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2 PAK/I2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.76Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
2/16
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤4A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/16
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
4/16
Output Characteristics
Safe Operating Area For TO-220FPSafe Operating Area:TO-220/DPAK/IPAK/D2PAK/I2PAK
Thermal Impedance:TO-220/DPAK/IPAK/D2PAK/I2PAK
5/16
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
6/16
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
Maximum Avalanche Energyvs Temperature
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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test CircuitFig.
Fig.3: Switching
Resistive Load
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
8/16

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