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STB4NK60Z ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB4NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP4NK60ZSTD4NK60ZSTB4NK60Z STP4NK60ZFPSTD4NK60Z ..
STB50NE08 ,N
STB50NE10L-T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 100 VV Drain ..
STB55NE06 ,N
STV0672 , Mono and Colour Digital Video CMOS Image Sensors
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STB45NF3LLT4
N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET
1/11November 2002
STP45NF3LL- STP45NF3LLFP
STB45NF3LLN-CHANNEL 30V- 0.014Ω - 45A TO-220- TO220FP- D2 PAK
STripFET II™ POWER MOSFET
(1) Starting Tj=25°C,ID= 22.5A, VDD=24V TYPICAL RDS(on)= 0.014Ω @4.5V OPTIMAL RDS(ON)x Qg TRADE-OFF@ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX “T4” FOR ORDERINGIN TAPE&
REEL
DESCRIPTIONThis application specific Power MOSFETis the
third genaration of STMicroelectronics unique
“Single Feature Size™” strip-based process. The
resulting transistor shows the best trade-off be-
tween on-resistance ang gate charge. When used high and low sidein buck regulators,it gives the
best performancein termsof both conduction and
switching losses. Thisis extremely important for
motherboards where fast switching and high effi-
ciency areof paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limitedby safe operating area
STP45NF3LL- STB45NF3LL2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/11
STP45NF3LL- STB45NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Safe Operating Area for TO-220/D2PAK Thermal Impedance for TO-220/D2PAK
STP45NF3LL- STB45NF3LL4/11
Thermal Impedance for TO-220FPSafe Operating Area for TO-220FP
Transconductance Static Drain-source On Resistance
TransferOutput Characteristics
5/11
STP45NF3LL- STB45NF3LL
Source-drain Diode Forward Characteristics Normalized Breakdown VoltagevsTj
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
Gate Chargevs Gate-source Voltage Capacitance Variations
STP45NF3LL- STB45NF3LL6/11
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
