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STB40NS15T4STMN/a1000avaiN-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFET


STB40NS15T4 ,N-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
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STB40NS15T4
N-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFET
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PRELIMINARY DATA

December 2001
STB40NS15

N-CHANNEL 150V - 0.042Ω - 40A D2 PAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

This powermos MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
STB40NS15
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/7
STB40NS15
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STB40NS15
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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STB40NS15
STB40NS15
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*D2 PAK FOOTPRINT
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