STB40NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB40NF10T4 ,N-CHANNEL 100VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTB40NF10T4 100 V < 0.028 Ω 50 A
STB40NF10T4
N-CHANNEL 100V
1/10December 2004
STB40NF10N-CHANNEL 100V - 0.025Ω - 50A - D²PAK
LOW GATE CHARGE STripFET™II MOSFET
Rev.2
STB40NF102/10
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(*) Limited by Package
(1) ISD ≤ 50A, di/dt ≤ 600 A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 50A, VDD = 25V
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
3/10
STB40NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Switching On
Table 8: Switching Off
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
STB40NF104/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/10
STB40NF10
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized Breakdown Voltage vs
Temperature
STB40NF106/10
Figure 15: Unclamped Inductive Load Test Cir-
cuit
Figure 17: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 18: Unclamped Inductive Wafeform
Figure 19: Gate Charge Test Circuit
