STP30NF10 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP30NF10FP ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETSTB30NF10STP30NF10 STP30NF10FP2N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D PAKLOW GATE CHARGE ..
STP30NS15LFP ,N-CHANNEL 150VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)150 VDS GSV Drain- ..
STP34NM60N ,N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220Electrical characteristics(T = 25 °C unless otherwise specified).CASE Table 4. On/off statesSymbol ..
STP36NE06 ,Trans MOSFET N-CH 60V 36A 3-Pin(3+Tab) TO-220STP36NE06STP36NE06FP®N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V ..
STP36NE06FP ,N-CHANNELSTP36NE06STP36NE06FP®N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V ..
SZF2002HL ,Low voltage 8-bit microcontroller with 6-kbyte embedded RAM
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
STB30NF10-STP30NF10-STP30NF10FP
N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
1/11May 2002
STB30NF10
STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2 PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤30A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 30V
STB30NF10 STP30NF10 STP30NF10FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/11
STB30NF10 STP30NF10 STP30NF10FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB30NF10 STP30NF10 STP30NF10FP
5/11
STB30NF10 STP30NF10 STP30NF10FPGate Charge vs Gate-source Voltage Capacitance Variations
STB30NF10 STP30NF10 STP30NF10FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
