STB3015L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB30NE06L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB30NF10 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF10T4 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STV0361 ,STV0360/0361 databriefSTV0360/0361COFDM demodulators IC for terrestrial TV set-top boxDATA BRIEFDESCRIPTION Figure 1. Pac ..
STV0367B ,Low-power and ultra-compact combo DVB-T/C single-chip receiverFeatures BenefitsCombines a configurable DVB-C/DVB-T This highly integrated SoC helps to reduce boa ..
STV0370 ,STV0370 databriefSTV0370Terrestrial (ATSC), cable (ITU-T J83B) and out-of-banddigital receiversDATA BRIEFDESCRIPTION ..
STV0502 ,CCD SENSORS ANALOG PROCESSOR ICSTV0502CCD SENSORS ANALOG PROCESSOR IC.SERIAL BUS CONTROLVIDEO.CORRELATED DOUBLE SAMPLING OF THECCD ..
STV0672 , Mono and Colour Digital Video CMOS Image Sensors
STV0674 ,TRI-MODE CMOS DIGITAL CAMERA CO-PROCESSORAbsolute maximum ratings .......114.2 DC characteristics ..114.3 SDRAM interface ...134.4 NAND flas ..
STB3015L-STP3015L
N-CHANNEL 30V
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PRELIMINARY DATANovember 2000
STB3015L
STP3015LN-CHANNEL 30V - 0.013 Ω - 40A D2 PAK/TO-220
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED
CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTIONThis Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalance characteristics and less critical alignment steps
therefore a remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, etc.)
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area (1)ISD [ 40 A, di/dt m 200A/ms, VDD [ V(BR)DSS, Tj [ TJMA
STB3015L/STP3015L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF (*)
DYNAMIC
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STB3015L/STP3015LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)STB3015L/STP3015L
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STB3015L/STP3015L
STB3015L/STP3015L