STB25NM60N-1 ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETAPPLICATIONSThe MDmesh™ II family is very suitable for in-crease the power density of high voltage ..
STB25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK packageElectrical characteristics(T =25 °C unless otherwise specified).CASETable 5. On/off statesValueSymb ..
STB28NM50N ,N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB3015L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB30NE06L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB30NF10 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STV0360 ,STV0360/0361 databriefapplications.The STV0360 and STV0361 demodulators arehigh performance COFDM (Coded OrthogonalFreque ..
STV0360 ,STV0360/0361 databriefapplications.The STV0360 and STV0361 demodulators arehigh performance COFDM (Coded OrthogonalFreque ..
STV0361 ,STV0360/0361 databriefSTV0360/0361COFDM demodulators IC for terrestrial TV set-top boxDATA BRIEFDESCRIPTION Figure 1. Pac ..
STV0367B ,Low-power and ultra-compact combo DVB-T/C single-chip receiverFeatures BenefitsCombines a configurable DVB-C/DVB-T This highly integrated SoC helps to reduce boa ..
STV0370 ,STV0370 databriefSTV0370Terrestrial (ATSC), cable (ITU-T J83B) and out-of-banddigital receiversDATA BRIEFDESCRIPTION ..
STV0502 ,CCD SENSORS ANALOG PROCESSOR ICSTV0502CCD SENSORS ANALOG PROCESSOR IC.SERIAL BUS CONTROLVIDEO.CORRELATED DOUBLE SAMPLING OF THECCD ..
STB25NM60N-STB25NM60N-1-STF25NM60N -STP25NM60N -STW25NM60N
N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
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PRODUCT PREVIEWJanuary 2005
STP25NM60N - STF25NM60N
STB25NM60N/-1 - STW25NM60NN-CHANNEL 650 @Tjmax-0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247
SECOND GENERATION MDmesh™ MOSFET
Rev. 1
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N2/12
Table 3: Absolute Maximum ratings (*) Limited only by maximum temperature allowed
(1) Pulse width limited by safe operating area
(2) ISD ≤ 20 A, di/dt ≤ 400 A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
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STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N4/12
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 6: Unclamped Inductive Wafeform
Figure 7: Gate Charge Test Circuit
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STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N6/12
