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Partno	Mfg	Dc	Qty	Available	Descript
STB20NM60D	ST	N/a	3000	avai	N-channel 600V

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STB20NM60D
N-channel 600V
June 2006 Rev 1 1/13
STB20NM60D
N-channel 600V - 0.26Ω - 20A - D2 PAK
FDmesh™ Power MOSFET
General features High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing
yields
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications Switching application

Internal schematic diagram

Order codes
Contents STB20NM60D
2/13
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STB20NM60D Electrical ratings
3/13
1 Electrical ratings



Table 1. Absolute maximum ratings Pulse width limited by safe operating area ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS
Table 2. Thermal resistance
Table 3. Avalanche data
Electrical characteristics STB20NM60D
4/13
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)


Table 4. On/off states
Table 5. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
STB20NM60D Electrical characteristics
5/13


Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Electrical characteristics STB20NM60D
6/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
STB20NM60D Electrical characteristics
7/13
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics