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STB20NM50T4
N-CHANNEL 550V @ Tjmax
1/12February 2004
STP20NM50- STP20NM50FP
STB20NM50- STB20NM50-1N-CHANNEL 550V @ Tjmax -0.20Ω- 20A TO-220/FP/D
2 PAK/I
2 PAK
MDmesh™ MOSFET TYPICAL RDS(on)= 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoptionof the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance thatis significantly better than thatof similar
competition’s products.
APPLICATIONSThe MDmesh™ familyis very suitable for increasing
power densityof high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS()Pulse width limitedby safe operating area
(1)ISD ≤20A, di/dt ≤400A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*)Limited onlyby maximum temperature allowed
STP20NM50/FP/STB20NM50/STB20NM50-12/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration=300µs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
3/12
STP20NM50/FP/STB20NM50/STB20NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/ I²PAK/ D²PAK
STP20NM50/FP/STB20NM50/STB20NM50-14/12
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
Thermal Impedance For TO-220/ I²PAK/ D²PAK
5/12
STP20NM50/FP/STB20NM50/STB20NM50-1
Gate Chargevs Gate-source Voltage Capacitance Variations
Source-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
STP20NM50/FP/STB20NM50/STB20NM50-16/12
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
