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STB16PF06L-STB16PF06LT4
P-CHANNEL 60V
1/10September 2004
STB16PF06LP-CHANNEL 60V - 0.11Ω - 16A D2PAK
STripFET™ MOSFET
Rev. 1
STB16PF06L2/10
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤16A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C , ID = 8 A , VDD = 30 V
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Table 4: Thermal Data(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
3/10
STB16PF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Source Drain DiodeNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STB16PF06L4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/10
STB16PF06L
Figure 9: Gate Charge vs Gate-source Voltage
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized Breakdown Voltage vs
Temperature
STB16PF06L6/10
Figure 15: Unclamped Inductive Load Test Cir-
cuit
Figure 17: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 18: Unclamped Inductive Wafeform
Figure 19: Gate Charge Test Circuit
